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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER VCBO VCEO INC Collector-base voltage E SEM ANG H 2SC2275 2SC2275A 2SC2275 2SC2275A OND IC CONDITIONS TOR UC VALUE 120 150 120 UNIT Open emitter V Collector-emitter voltage Open base 150 Open collector 5 1.5 3.0 0.3 TC=25ae 25 150 -55~150 ae ae V VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS 2SC2275 2SC2275A SYMBOL MIN TYP. MAX UNIT 2SC2275 V(BR)CEO Collector-emitter breakdown voltage 2SC2275A IC=25mA ,IB=0 120 V 150 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 |I A IEBO Emitter cut-off current VEB=3V; IC=0 1.0 |I A hFE-1 DC current gain hFE-2 COB DC current gain IC=5mA ; VCE=5V 35 fT CHA IN Transition frequency Output capacitance E SEM NG IC=0.3A ; VCE=5V IE=0 ; VCB=10V,f=1MHz OND IC 60 TOR UC 150 320 19 pF 200 MHz IC=0.2A ; VCE=5V hFE-2 Classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2275 2SC2275A CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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